Job Description
The Material Scientist will lead research and development efforts in the design, fabrication, and characterization of nano-scale semiconductor devices using advanced electron microscopy techniques, supporting process development, failure analysis, and mentoring junior staff in a collaborative environment.
Key Responsibilities
- Lead and drive R&D efforts involving design, fabrication, and characterization of nano-scale quantum-effect semiconductor devices
- Investigate devices using S TEM and related analytical electron microscopy techniques
- Develop and refine microscopy characterization methods and advance microscopy techniques
- Identify failure modes of semiconductor devices using advanced characterization methods and inform process development
- Support materials characterization, process development, and failure analysis in collaboration with senior technical staff
- Mentor junior staff on microscopy, process development, and failure analysis best practices
- Present research findings through technical presentations, reports, publications, and proposals
Requirements
- Ability to lead and drive creative focused R D efforts involving design, fabrication, and characterization of nano-scale quantum-effect semiconductor devices.
- Experience investigating devices with S TEM and related analytical electron microscopy techniques as a member of an interdisciplinary team.
- Ability to develop and refine microscopy characterization methods and advance the state of the art in microscopy techniques.
- Proficiency in using advanced characterization methods to identify failure modes of novel semiconductor devices and inform process development efforts.
- Ability to provide feedback to team members on materials characterization, process development, and failure analysis efforts.
- Experience working closely with senior technical staff to support materials characterization, process development, and failure analysis efforts.
- Experience mentoring junior technical staff on best practices for microscopy, process development, and failure analysis.
- Ability to present ideas and results in effective technical presentations and reports, write technical papers, and contribute to research proposals.
- At least 3 years of experience with microscopy techniques such as High-Resolution Transmission Electron Microscopy (HR-TEM), High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM), Energy Dispersive X-ray Spectroscopy (EDS), and Electron Energy Loss Spectroscopy (EELS).
- Experience with TEM tomography, strain mapping, and focused ion beam lamella preparation is a plus.
- Experience in semiconductor process development and failure analysis of semiconductor devices is a plus.
- A history of productive research as evident in publications, patents, or presentations is a plus.
- Industry experience is a plus.
- Experience with data handling software such as Excel, JMP, Python, or IGOR is desired.
- Ph.D. in Materials Science Engineering, Electrical Engineering, Physics, or related fields.
- US Citizenship with the ability to obtain and maintain a US Government Security Clearance.
Benefits & Perks
Base salary range: 140,700 - 175,900 USD
Bonus benefits
Work location-dependent pay adjustments
Potential for career development through research publications, patents, and presentations
Ready to Apply?
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